Influence of Hydrogen Treatment on Electrical Properties of Detector-Grade CdMnTe:In Crystals

被引：6
|
作者：
Yu, Pengfei [1 ]
Shao, Tingquan [1 ]
Ma, Zhefan [1 ]
Gao, Pandeng [1 ]
Jing, Biru [1 ]
Liu, Wenfei [1 ]
Liu, Chongqi [1 ]
Chen, Yongyang [1 ]
Liu, Yuanpei [1 ]
Fang, Zhou [1 ]
Luan, Lijun [1 ]
机构：
[1] Changan Univ, Sch Mat Sci & Engn, Xian 710061, Peoples R China
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2021年 / 68卷 / 04期
关键词：
Annealing; cadmium compounds; current-voltage characteristics; materials testing; semiconductor detectors; GROWTH;
D O I：
10.1109/TNS.2021.3067726
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of hydrogen treatment on electrical properties of detector-grade cadmium manganese telluride (CdMnTe:In) crystals were investigated. The results showed that the resistivity of the crystals was improved from 10(9) to 10(10) Omega.cm after annealing. With the increase of annealing time, the resistivity first increased and then decreased. Hydrogen passivation reduced the carrier concentration and enhanced mobility. The disappearance of A1 phonon mode of Te in Raman spectroscopy suggested that Te was decreased in crystal surface. The energy resolution and mobility-lifetime product of CdMnTe detectors were significantly improved. The CdMnTe:In crystal annealed for 30-h hydrogen treatment with greatest energy resolution and highest (mu tau)(e) value had the best detector performance.
引用
收藏
页码：458 / 462
页数：5
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