Influence of Hydrogen Treatment on Electrical Properties of Detector-Grade CdMnTe:In Crystals

被引：6
|
作者：
Yu, Pengfei [1 ]
Shao, Tingquan [1 ]
Ma, Zhefan [1 ]
Gao, Pandeng [1 ]
Jing, Biru [1 ]
Liu, Wenfei [1 ]
Liu, Chongqi [1 ]
Chen, Yongyang [1 ]
Liu, Yuanpei [1 ]
Fang, Zhou [1 ]
Luan, Lijun [1 ]
机构：
[1] Changan Univ, Sch Mat Sci & Engn, Xian 710061, Peoples R China
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2021年 / 68卷 / 04期
关键词：
Annealing; cadmium compounds; current-voltage characteristics; materials testing; semiconductor detectors; GROWTH;
D O I：
10.1109/TNS.2021.3067726
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of hydrogen treatment on electrical properties of detector-grade cadmium manganese telluride (CdMnTe:In) crystals were investigated. The results showed that the resistivity of the crystals was improved from 10(9) to 10(10) Omega.cm after annealing. With the increase of annealing time, the resistivity first increased and then decreased. Hydrogen passivation reduced the carrier concentration and enhanced mobility. The disappearance of A1 phonon mode of Te in Raman spectroscopy suggested that Te was decreased in crystal surface. The energy resolution and mobility-lifetime product of CdMnTe detectors were significantly improved. The CdMnTe:In crystal annealed for 30-h hydrogen treatment with greatest energy resolution and highest (mu tau)(e) value had the best detector performance.
引用
收藏
页码：458 / 462
页数：5
相关论文
共 50 条
  • [1] Investigation of Te atmosphere annealing on the properties of detector-grade CdMnTe:In single crystals
    Yu, Pengfei
    Luan, Lijun
    Du, Yuanyuan
    Zheng, Jiahong
    Jie, Wanqi
    [J]. JOURNAL OF CRYSTAL GROWTH, 2015, 430 : 103 - 107
  • [2] Growth and characterization of detector-grade CdMnTe by the vertical Bridgman technique
    Roy, U. N.
    Okobiah, O. K.
    Camarda, G. S.
    Cui, Y.
    Gul, R.
    Hossain, A.
    Yang, G.
    Egarievwe, S. U.
    James, R. B.
    [J]. AIP ADVANCES, 2018, 8 (10)
  • [3] Detector-grade CdZnTe:In crystals obtained by annealing
    Pengfei Yu
    Wanqi Jie
    Tao Wang
    [J]. Journal of Materials Science, 2011, 46 : 3749 - 3752
  • [4] Detector-grade CdZnTe:In crystals obtained by annealing
    Yu, Pengfei
    Jie, Wanqi
    Wang, Tao
    [J]. JOURNAL OF MATERIALS SCIENCE, 2011, 46 (11) : 3749 - 3752
  • [5] Study of Detector-Grade CdMnTe:In Crystals Obtained by a Multi-Step Post-Growth Annealing Method
    Yu, Pengfei
    Chen, Yongren
    Li, Wei
    Liu, Wenfei
    Liu, Bin
    Yang, Jie
    Ni, Kun
    Luan, Lijun
    Zheng, Jiahong
    Li, Zhuo
    Bai, Min
    Sun, Guodong
    Li, Hui
    Jie, Wanqi
    [J]. CRYSTALS, 2018, 8 (10):
  • [6] Characterization of heterogeneities in detector-grade cdznte crystals
    Duff M.C.
    Hunter D.B.
    Burger A.
    Groza M.
    Buliga V.
    Bradley J.P.
    Graham G.
    Dai Z.R.
    Teslich N.
    Black D.R.
    Lanzirotti A.
    [J]. Journal of Materials Research, 2009, 24 (04) : 1361 - 1367
  • [7] Thermal treatment of detector-grade CdZnTe
    Li, Guoqiang
    Zhang, Xiaolu
    Jie, Wanqi
    Hui, Chun
    [J]. JOURNAL OF CRYSTAL GROWTH, 2006, 295 (01) : 31 - 35
  • [8] Investigation of Structural Defects in CdZnTe Detector-Grade Crystals
    Hossain, A.
    Bolotnikov, A. E.
    Camarda, G. S.
    Gul, R.
    Kim, K. H.
    Kisslinger, K.
    Yang, G.
    Zhang, L. H.
    James, R. B.
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2012, 41 (10) : 2908 - 2911
  • [9] Investigation of Structural Defects in CdZnTe Detector-Grade Crystals
    A. Hossain
    A.E. Bolotnikov
    G.S. Camarda
    R. Gul
    K.H. Kim
    K. Kisslinger
    G. Yang
    L.H. Zhang
    R.B. James
    [J]. Journal of Electronic Materials, 2012, 41 : 2908 - 2911
  • [10] Characterization of detector-grade CdZnTe:Al crystals obtained by annealing
    Yu, Pengfei
    He, Yihui
    Wang, Tao
    Jie, Wanqi
    [J]. JOURNAL OF CRYSTAL GROWTH, 2011, 324 (01) : 22 - 25
12345