Characterization of GaN grown by RF plasma MBE

被引：4

作者：

Li, W ^{[1
]}

Li, AZ ^{[1
]}

Qi, M ^{[1
]}

Zhang, YG ^{[1
]}

Zhao, ZB ^{[1
]}

Yang, QK ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Met, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 75卷 / 2-3期

关键词：

gallium nitride (GaN); RF plasma assisted molecular beam epitaxy (MBE); two dimensional triple axis mapping (TDTAM); photoluminescence (PL); transmission spectrum;

D O I：

10.1016/S0921-5107(00)00368-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

GaN (Gallium nitride) has been grown successfully on sapphire by RF plasma MBE through optimizing the growth condition. Two dimensional triple axis mapping (TDTAM) was used to characterize the GaN epilayers. The dislocation density in the epilayers was estimated to be about 7.8 x 10(8) cm(-2) according to the mosaic model. The 77K photoluminescence (PL) of the Si-doped GaN with different concentration show that Si can act both donor and acceptor at very high concentration. Transmission spectrum has also been measured for further understanding of the sample. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：224 / 227

页数：4

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