Programmable Electrofluidics for Ionic Liquid Based Neuromorphic Platform

被引:3
|
作者
Boldman, Walker L. [1 ]
Zhang, Cheng [1 ]
Ward, Thomas Z. [2 ]
Briggs, Dayrl P. [3 ]
Srijanto, Bernadeta R. [3 ]
Brisk, Philip [4 ]
Rack, Philip D. [1 ,3 ]
机构
[1] Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA
[2] Oak Ridge Natl Lab, Mat Sci & Technol Div, POB 2009, Oak Ridge, TN 37831 USA
[3] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, POB 2009, Oak Ridge, TN 37831 USA
[4] Univ Calif Riverside, Dept Comp Sci & Engn, Riverside, CA 92521 USA
基金
美国国家科学基金会;
关键词
electrowetting; neuromorphic; ionic liquid; biasing; device; platform; transistors; TFT; TFTs; IGZO; indium gallium zinc oxide; microfluidics; electrochemical; electrostatic; ON-DIELECTRIC ACTUATION; METALLIZATION;
D O I
10.3390/mi10070478
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Due to the limit in computing power arising from the Von Neumann bottleneck, computational devices are being developed that mimic neuro-biological processing in the brain by correlating the device characteristics with the synaptic weight of neurons. This platform combines ionic liquid gating and electrowetting for programmable placement/connectivity of the ionic liquid. In this platform, both short-term potentiation (STP) and long-term potentiation (LTP) are realized via electrostatic and electrochemical doping of the amorphous indium gallium zinc oxide (aIGZO), respectively, and pulsed bias measurements are demonstrated for lower power considerations. While compatible with resistive elements, we demonstrate a platform based on transitive amorphous indium gallium zinc oxide (aIGZO) pixel elements. Using a lithium based ionic liquid, we demonstrate both potentiation (decrease in device resistance) and depression (increase in device resistance), and propose a 2D platform array that would enable a much higher pixel count via Active Matrix electrowetting.
引用
收藏
页数:9
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