Hall Coefficient of Semimetals

被引：12

作者：

Samanta, Abhisek ^{[1
]}

Arovas, Daniel P. ^{[2
]}

Auerbach, Assa ^{[1
]}

机构：

[1] Technion, Phys Dept, IL-32000 Haifa, Israel

[2] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

来源：

PHYSICAL REVIEW LETTERS | 2021年 / 126卷 / 07期

基金：

以色列科学基金会; 美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.126.076603

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A recently developed formula for the Hall coefficient [A. Auerbach, Phys. Rev. Lett. 121, 066601 (2018)] is applied to nodal line and Weyl semimetals (including graphene) and to spin-orbit split semiconductor bands in two and three dimensions. The calculation reduces to a ratio of two equilibrium susceptibilities, where corrections are negligible at weak disorder. Deviations from Drude's inverse carrier density arc associated with band degeneracies, Fermi surface topology, and interband currents. Experiments which can measure these deviations are proposed.

引用

页数：6

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