The luminescence of C-N thin films formed by nitrogen ion implantation on a diamond film

被引：2
|
作者：
Cheng, GA [1 ]
Xu, F [1 ]
You, QY [1 ]
Ye, DR [1 ]
机构：
[1] Nanchang Univ, Dept Mat Sci & Engn, Nanchang 330047, Peoples R China
来源：
SURFACE & COATINGS TECHNOLOGY | 2000年 / 128卷
基金：
美国国家科学基金会;
关键词：
beta-C3N4; thin film; ion implantation; photoluminescence;
D O I：
10.1016/S0257-8972(00)00597-1
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this presentation, C-N thin films synthesized by nitrogen-ion implantation on a diamond film are investigated. The structures of the implanted film and unimplanted films were determined by the use of an X-ray diffractometer (XRD) and scanning electron microscopy (SEM). It was found that a beta-C3N4 compound thin film was formed in the implanted layer. By means of the spectrophotometer, it indicates that the intensive blue-violet luminescence, excited at 249 nm, is obtained at room temperature, and the up-conversion luminescence in the blue-violet area, excited at 631 nm, is also observed. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：320 / 323
页数：4
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