Ion implantation effects of microcrystalline and nanocrystalline diamond thin films

被引:0
|
作者
Narayanan, KL
Soga, T
Tokunaga, T
Yamaguchi, M
机构
[1] Tokyo Inst Technol, Dept Phys Electron, Meguro Ku, Tokyo 1528552, Japan
[2] Nagoya Inst Technol, Dept Environm Technol & Urban Planning, Showa Ku, Nagoya, Aichi 4668555, Japan
[3] Toyota Technol Inst, Semicond Res Ctr, Tempa Ku, Nagoya, Aichi 4688511, Japan
关键词
diamond; nanocrystalline; microcrystal line; a-carbon; implantation; structure;
D O I
10.1143/JJAP.43.7971
中图分类号
O59 [应用物理学];
学科分类号
摘要
Microcrystalline and nanocrystalline diamond thin films deposited on Si substrates by microwave plasma chemical vapor deposition are bombarded by 40keV B+ ions. Raman scattering studies of the ion implanted diamond films reveal the structural modification irrespective of the nature of the crystalline quality. X-ray diffraction results indicate the possibility of formation of borocarbide phase on ion irradiation. Ion beam current dependence and post ion implantation annealing studies on the micro and nano-crystal line thin films are also presented.
引用
收藏
页码:7971 / 7975
页数:5
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