Large-area ZnO/MoS2 heterostructure grown by pulsed laser deposition

被引：11
|
作者：
Su, Binbin [1 ]
He, Haiping [1 ]
Ye, Zhizhen [1 ]
机构：
[1] Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China
来源：
MATERIALS LETTERS | 2019年 / 253卷
基金：
中国国家自然科学基金;
关键词：
Semiconductors; Optical materials and properties; Thin films; MOLYBDENUM-DISULFIDE; MOS2; SEMICONDUCTORS; INTERFACE;
D O I：
10.1016/j.matlet.2019.06.048
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A simple and efficient method to grow continuous large-area ZnO/MoS2 heterostructures is demonstrated by pulsed laser deposition. The layer number of MoS2 films is controlled by the number of laser pulses. The MoS2 film acts as a closely lattice-matched buffer layer for the subsequent ZnO growth, which improves the structural and optical quality of the ZnO film. ZnO film and multilayer MoS2 forms a type-II heterostructure, and the band offsets between them are quantitatively determined. (C) 2019 Elsevier B.V. All rights reserved.
引用
收藏
页码：187 / 190
页数：4
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