Study of amorphous MoS2 films grown by pulsed laser deposition

被引:27
|
作者
McDevitt, NT
Bultman, JE
Zabinski, JS [1 ]
机构
[1] USAF, Wright Lab, MLBT, Mat Directorate, Wright Patterson AFB, OH 45433 USA
[2] Ramspec Res, Dayton, OH 45431 USA
[3] Univ Dayton, Res Inst, Dayton, OH 45469 USA
关键词
Raman spectroscopy; XPS; MoS2; films;
D O I
10.1366/0003702981945165
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The amorphous structure of MoS2 films prepared by pulsed laser deposition (PLD) has been evaluated with the use of Raman and X-ray photoelectron spectroscopy (XPS). The initial study of the room-temperature deposited films indicated a featureless Raman spectrum. On closer examination, however, four weak reproducible bands were observed. There has been some confusion in the literature as to the nature of this spectrum-whether it represents an amorphous MoS3 structure or a mixture of MoS2 and sulfur. Our interpretation of the Raman and XPS data indicates that the laser-deposited films represent a mixture of small domains of MoS2 and amorphous sulfur.
引用
收藏
页码:1160 / 1164
页数:5
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