Scanning tunneling microscopy of defect states in the semiconductor Bi2Se3 -: art. no. 161306

被引:85
|
作者
Urazhdin, S [1 ]
Bilc, D
Tessmer, SH
Mahanti, SD
Kyratsi, T
Kanatzidis, MG
机构
[1] Michigan State Univ, Dept Phys & Astron, E Lansing, MI 48824 USA
[2] Michigan State Univ, Dept Chem, E Lansing, MI 48824 USA
关键词
D O I
10.1103/PhysRevB.66.161306
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Scanning tunneling spectroscopy images of Bi2Se3 doped with excess Bi reveal electronic defect states with a striking shape resembling clover leaves. With a simple tight-binding model, we show that the geometry of the defect states in Bi2Se3 can be directly related to the position of the originating impurities. Only the Bi defects at the Se sites five atomic layers below the surface are experimentally observed. We show that this effect can be explained by the interplay of defect and surface electronic structure.
引用
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页码:1 / 4
页数:4
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