Characteristics of trap-filled GaAs photoconductive switches used in high gain pulsed power applications

被引：1
|
作者：
Islam, NE [1 ]
Schamiloglu, E [1 ]
Mar, A [1 ]
Zutavern, F [1 ]
Loubriel, GM [1 ]
Joshi, RP [1 ]
机构：
[1] Univ New Mexico, Dept Elect & Comp Engn, Albuquerque, NM 87131 USA
来源：
ULTRA-WIDEBAND, SHORT-PULSE ELECTROMAGNETICS 5 | 2002年
关键词：
D O I：
10.1007/0-306-47948-6_55
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：461 / 466
页数：6
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