Atomic Layer Deposition of Tungsten Oxide Using Nitrogen Dioxide: A Comparative Study with Other Oxygen Sources

被引：4

作者：

Farmer, Damon B. ^{[1
]}

Copel, Matthew ^{[1
]}

Todorov, Teodor ^{[1
]}

Ott, John A. ^{[1
]}

Hopstaken, Marinus ^{[1
]}

Bui, Holt ^{[2
]}

Tabachnick, Charles ^{[1
]}

Fraczak, Gloria ^{[1
]}

Totir, George ^{[1
]}

机构：

[1] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] IBM Almaden Res Ctr, San Jose, CA 95110 USA

来源：

CHEMISTRY OF MATERIALS | 2021年 / 33卷 / 07期

关键词：

THIN-FILMS; NITRIDE;

D O I：

10.1021/acs.chemmater.0c03928

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Atomic layer deposition of tungsten oxide thin films using bis(t-butylimido)-bis(dimethylamido)tungsten is investigated using various oxygen precursors. Significant amounts of unreacted nitrogen originating from the tungsten precursor are found in films deposited thermally using conventional oxygen sources like water, oxygen, and hydrogen peroxide. This problem is remedied using nitrogen dioxide as the oxygen source. Tungsten oxide films deposited using this rarely utilized precursor are shown to have minimal nitrogen content, an enhanced deposition rate, and a WO3 stoichiometry. The electrochemical and photothermal properties of films deposited using nitrogen dioxide are shown to be superior to films deposited using the other oxygen precursors.

引用

页码：2267 / 2273

页数：7

共 50 条

[41] Atomic layer epitaxy of tungsten oxide films using oxyfluorides as metal precursors
Tägtström, P
Mårtensson, P
Jansson, U
Carlsson, JO
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (08) : 3139 - 3143
[42] Atomic layer deposition of titanium dioxide nanostructures using carbon nanosheets as a template
Rooth, Marten
Quinlan, Ronald A.
Widenkvist, Erika
Lu, Jun
Grennberg, Helena
Holloway, Brian C.
Harsta, Anders
Jansson, Ulf
JOURNAL OF CRYSTAL GROWTH, 2009, 311 (02) : 373 - 377
[43] Engineering titanium and aluminum oxide composites using atomic layer deposition
Abaffy, N. Bilus
McCulloch, D. G.
Partridge, J. G.
Evans, P. J.
Triani, G.
JOURNAL OF APPLIED PHYSICS, 2011, 110 (12)
[44] Scaled indium oxide transistors fabricated using atomic layer deposition
Si, Mengwei
Lin, Zehao
Chen, Zhizhong
Sun, Xing
Wang, Haiyan
Ye, Peide D.
NATURE ELECTRONICS, 2022, 5 (03) : 164 - 170
[45] Scaled indium oxide transistors fabricated using atomic layer deposition
Mengwei Si
Zehao Lin
Zhizhong Chen
Xing Sun
Haiyan Wang
Peide D. Ye
Nature Electronics, 2022, 5 : 164 - 170
[46] Atomic layer deposition of ytterbium oxide using β-diketonate and ozone precursors
Bosund, M.
Mizohata, K.
Hakkarainen, T.
Putkonen, M.
Soderlund, M.
Honkanen, S.
Lipsanen, H.
APPLIED SURFACE SCIENCE, 2009, 256 (03) : 847 - 851
[47] Atomic layer deposition of hafnium oxide using anhydrous hafnium nitrate
Conley, JF
Ono, Y
Zhuang, W
Tweet, DJ
Gao, W
Mohammed, SK
Solanki, R
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2002, 5 (05) : C57 - C59
[48] Thermal Atomic Layer Deposition of Aluminum-Molybdenum Oxide Films Using Trimethylaluminum, Molybdenum Dichloride Dioxide and Water
Maksumova, A. M.
Bodalev, I. S.
Gadzhimuradov, S. G.
Abdulagatov, I. M.
Rabadanov, M. K.
Abdulagatov, A. I.
RUSSIAN JOURNAL OF APPLIED CHEMISTRY, 2024, 97 (07) : 595 - 607
[49] The reaction pathways of the oxygen plasma pulse in the hafnium oxide atomic layer deposition process
Jeon, Hyeongtag
Won, Youngdo
APPLIED PHYSICS LETTERS, 2008, 93 (12)
[50] Hafnium tetraiodide and oxygen as precursors for atomic layer deposition of hafnium oxide thin films
Aarik, J
Sundqvist, J
Aidla, A
Lu, J
Sajavaara, T
Kukli, K
Hårsta, A
THIN SOLID FILMS, 2002, 418 (02) : 69 - 72

← 1 2 3 4 5 →