Atomic Layer Deposition of Tungsten Oxide Using Nitrogen Dioxide: A Comparative Study with Other Oxygen Sources

被引：4

作者：

Farmer, Damon B. ^{[1
]}

Copel, Matthew ^{[1
]}

Todorov, Teodor ^{[1
]}

Ott, John A. ^{[1
]}

Hopstaken, Marinus ^{[1
]}

Bui, Holt ^{[2
]}

Tabachnick, Charles ^{[1
]}

Fraczak, Gloria ^{[1
]}

Totir, George ^{[1
]}

机构：

[1] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] IBM Almaden Res Ctr, San Jose, CA 95110 USA

来源：

CHEMISTRY OF MATERIALS | 2021年 / 33卷 / 07期

关键词：

THIN-FILMS; NITRIDE;

D O I：

10.1021/acs.chemmater.0c03928

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Atomic layer deposition of tungsten oxide thin films using bis(t-butylimido)-bis(dimethylamido)tungsten is investigated using various oxygen precursors. Significant amounts of unreacted nitrogen originating from the tungsten precursor are found in films deposited thermally using conventional oxygen sources like water, oxygen, and hydrogen peroxide. This problem is remedied using nitrogen dioxide as the oxygen source. Tungsten oxide films deposited using this rarely utilized precursor are shown to have minimal nitrogen content, an enhanced deposition rate, and a WO3 stoichiometry. The electrochemical and photothermal properties of films deposited using nitrogen dioxide are shown to be superior to films deposited using the other oxygen precursors.

引用

页码：2267 / 2273

页数：7

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