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- [31] Thermal conductivity of phase-change material Ge2Sb2Te5APPLIED PHYSICS LETTERS, 2006, 89 (15)Lyeo, Ho-Ki论文数: 0 引用数: 0 h-index: 0机构: Univ Illinois, Frederick Seitz Mat Res Lab, Dept Mat Sci & Engn, Urbana, IL 61801 USA Univ Illinois, Frederick Seitz Mat Res Lab, Dept Mat Sci & Engn, Urbana, IL 61801 USACahill, David G.论文数: 0 引用数: 0 h-index: 0机构: Univ Illinois, Frederick Seitz Mat Res Lab, Dept Mat Sci & Engn, Urbana, IL 61801 USALee, Bong-Sub论文数: 0 引用数: 0 h-index: 0机构: Univ Illinois, Frederick Seitz Mat Res Lab, Dept Mat Sci & Engn, Urbana, IL 61801 USAAbelson, John R.论文数: 0 引用数: 0 h-index: 0机构: Univ Illinois, Frederick Seitz Mat Res Lab, Dept Mat Sci & Engn, Urbana, IL 61801 USAKwon, Min-Ho论文数: 0 引用数: 0 h-index: 0机构: Univ Illinois, Frederick Seitz Mat Res Lab, Dept Mat Sci & Engn, Urbana, IL 61801 USAKim, Ki-Bum论文数: 0 引用数: 0 h-index: 0机构: Univ Illinois, Frederick Seitz Mat Res Lab, Dept Mat Sci & Engn, Urbana, IL 61801 USABishop, Stephen G.论文数: 0 引用数: 0 h-index: 0机构: Univ Illinois, Frederick Seitz Mat Res Lab, Dept Mat Sci & Engn, Urbana, IL 61801 USACheong, Byung-ki论文数: 0 引用数: 0 h-index: 0机构: Univ Illinois, Frederick Seitz Mat Res Lab, Dept Mat Sci & Engn, Urbana, IL 61801 USA
- [32] Phase change of Ge2Sb2Te5 under terahertz laser illuminationAPL MATERIALS, 2021, 9 (10)Zhou, Kang论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Solid State Technol, Shanghai 200050, Peoples R China Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Solid State Technol, Shanghai 200050, Peoples R ChinaNan, Junyi论文数: 0 引用数: 0 h-index: 0机构: East China Normal Univ, State Key Lab Precis Spect, Shanghai 200062, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Solid State Technol, Shanghai 200050, Peoples R ChinaShen, Jiabin论文数: 0 引用数: 0 h-index: 0机构: Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Solid State Technol, Shanghai 200050, Peoples R ChinaLi, Ziping论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Solid State Technol, Shanghai 200050, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Solid State Technol, Shanghai 200050, Peoples R ChinaCao, J. C.论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Solid State Technol, Shanghai 200050, Peoples R China Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Solid State Technol, Shanghai 200050, Peoples R ChinaSong, Zhitang论文数: 0 引用数: 0 h-index: 0机构: Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Solid State Technol, Shanghai 200050, Peoples R ChinaZhu, Min论文数: 0 引用数: 0 h-index: 0机构: Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Solid State Technol, Shanghai 200050, Peoples R ChinaHe, Boqu论文数: 0 引用数: 0 h-index: 0机构: East China Normal Univ, State Key Lab Precis Spect, Shanghai 200062, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Solid State Technol, Shanghai 200050, Peoples R ChinaYan, Ming论文数: 0 引用数: 0 h-index: 0机构: East China Normal Univ, State Key Lab Precis Spect, Shanghai 200062, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Solid State Technol, Shanghai 200050, Peoples R ChinaZeng, Heping论文数: 0 引用数: 0 h-index: 0机构: East China Normal Univ, State Key Lab Precis Spect, Shanghai 200062, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Solid State Technol, Shanghai 200050, Peoples R ChinaLi, Hua论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Solid State Technol, Shanghai 200050, Peoples R China Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Solid State Technol, Shanghai 200050, Peoples R China
- [33] Influence of doping upon the phase change characteristics of Ge2Sb2Te5Microsystem Technologies, 2007, 13 : 203 - 206K. Wang论文数: 0 引用数: 0 h-index: 0机构: I. Physikalisches Institut der RWTH Aachen,C. Steimer论文数: 0 引用数: 0 h-index: 0机构: I. Physikalisches Institut der RWTH Aachen,D. Wamwangi论文数: 0 引用数: 0 h-index: 0机构: I. Physikalisches Institut der RWTH Aachen,S. Ziegler论文数: 0 引用数: 0 h-index: 0机构: I. Physikalisches Institut der RWTH Aachen,M. Wuttig论文数: 0 引用数: 0 h-index: 0机构: I. Physikalisches Institut der RWTH Aachen,J. Tomforde论文数: 0 引用数: 0 h-index: 0机构: I. Physikalisches Institut der RWTH Aachen,W. Bensch论文数: 0 引用数: 0 h-index: 0机构: I. Physikalisches Institut der RWTH Aachen,
- [34] Ferroelectric properties of Ge2Sb2Te5 phase-change filmsAPPLIED PHYSICS LETTERS, 2010, 97 (06)Gervacio Arciniega, J. J.论文数: 0 引用数: 0 h-index: 0机构: CINVESTAV, Unidad Queretaro, Juriquilla 76230, Mexico CINVESTAV, Unidad Queretaro, Juriquilla 76230, MexicoProkhorov, E.论文数: 0 引用数: 0 h-index: 0机构: CINVESTAV, Unidad Queretaro, Juriquilla 76230, Mexico CINVESTAV, Unidad Queretaro, Juriquilla 76230, MexicoEspinoza Beltran, F. J.论文数: 0 引用数: 0 h-index: 0机构: CINVESTAV, Unidad Queretaro, Juriquilla 76230, Mexico CINVESTAV, Unidad Queretaro, Juriquilla 76230, MexicoGonzalez-Hernandez, J.论文数: 0 引用数: 0 h-index: 0机构: Ctr Invest Mat Avanzados, SC, Chihuahua 31109, Chih, Mexico Lab Nacl Nanotecnol, Chihuahua 31109, Chih, Mexico CINVESTAV, Unidad Queretaro, Juriquilla 76230, Mexico
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- [36] Thermal effect of Ge2Sb2Te5 in phase change memory deviceCHINESE PHYSICS B, 2014, 23 (08)Li Jun-Tao论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaLiu Bo论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaSong Zhi-Tang论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaRen Kun论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaZhu Min论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaXu Jia论文数: 0 引用数: 0 h-index: 0机构: Semicond Mfg Int Corp, Shanghai 201203, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaRen Jia-Dong论文数: 0 引用数: 0 h-index: 0机构: Semicond Mfg Int Corp, Shanghai 201203, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaFeng Gao-Ming论文数: 0 引用数: 0 h-index: 0机构: Semicond Mfg Int Corp, Shanghai 201203, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaRen Wan-Chun论文数: 0 引用数: 0 h-index: 0机构: Semicond Mfg Int Corp, Shanghai 201203, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaTong Hao论文数: 0 引用数: 0 h-index: 0机构: Semicond Mfg Int Corp, Shanghai 201203, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
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- [38] Valence band structures of the phase change material Ge2Sb2Te5APPLIED PHYSICS LETTERS, 2007, 91 (25)Lee, Dohyun论文数: 0 引用数: 0 h-index: 0机构: Korea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South Korea Korea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South KoreaLee, Sang Sun论文数: 0 引用数: 0 h-index: 0机构: Korea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South Korea Korea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South KoreaKim, Wondong论文数: 0 引用数: 0 h-index: 0机构: Korea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South Korea Korea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South KoreaHwang, Chanyong论文数: 0 引用数: 0 h-index: 0机构: Korea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South Korea Korea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South KoreaHossain, M. B.论文数: 0 引用数: 0 h-index: 0机构: Chungnam Natl Univ, Sch Nano Sci & Technol, Dept Nano Informat Syst Engn, Taejon 305764, South Korea Korea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South KoreaLe Hung, Ngyuen论文数: 0 引用数: 0 h-index: 0机构: Chungnam Natl Univ, Sch Nano Sci & Technol, Dept Nano Informat Syst Engn, Taejon 305764, South Korea Korea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South Korea论文数: 引用数: h-index:机构:Kim, C. G.论文数: 0 引用数: 0 h-index: 0机构: Chungnam Natl Univ, Sch Nano Sci & Technol, Dept Nano Informat Syst Engn, Taejon 305764, South Korea Korea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South KoreaLee, Hangil论文数: 0 引用数: 0 h-index: 0机构: Pohang Univ Sci & Technol, Pohang Accelerator Lab, Beamline Res Div, Pohang 790784, South Korea Korea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South KoreaHwang, Han Na论文数: 0 引用数: 0 h-index: 0机构: Pohang Univ Sci & Technol, Pohang Accelerator Lab, Beamline Res Div, Pohang 790784, South Korea Korea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South KoreaHwang, Chan-Cuk论文数: 0 引用数: 0 h-index: 0机构: Pohang Univ Sci & Technol, Pohang Accelerator Lab, Beamline Res Div, Pohang 790784, South Korea Korea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South KoreaLee, Tae-Yon论文数: 0 引用数: 0 h-index: 0机构: Samsung Adv Inst Technol, Semicond Device Lab, Yongin 446712, South Korea Korea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South KoreaKang, Younseon论文数: 0 引用数: 0 h-index: 0机构: Samsung Adv Inst Technol, Semicond Device Lab, Yongin 446712, South Korea Korea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South KoreaKim, Cheolkyu论文数: 0 引用数: 0 h-index: 0机构: Samsung Adv Inst Technol, Semicond Device Lab, Yongin 446712, South Korea Korea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South KoreaSuh, Dong-Seok论文数: 0 引用数: 0 h-index: 0机构: Samsung Adv Inst Technol, Semicond Device Lab, Yongin 446712, South Korea Korea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South KoreaKim, Kijoon H. P.论文数: 0 引用数: 0 h-index: 0机构: Samsung Adv Inst Technol, Semicond Device Lab, Yongin 446712, South Korea Korea Res Inst Stand & Sci, Div Adv Technol, Adv Ind Technol Grp, Taejon 305600, South Korea论文数: 引用数: h-index:机构:
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