Electric-field and temperature effects on electric currents in polycrystalline ZnGa2Se4

被引：1
|
作者：
Georgobiani, A. N. [1 ]
Tagiev, B. G. [2 ]
Tagiev, O. B. [2 ]
Kerimova, T. G. [2 ]
Abushov, S. A. [2 ]
Asadullaeva, S. G. [2 ]
机构：
[1] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, Russia
[2] Azerbaijan Acad Sci, Inst Phys, AZ-1143 Baku, Azerbaijan
来源：
INORGANIC MATERIALS | 2010年 / 46卷 / 02期
关键词：
Applied Electric Field; Electric Field Effect; Relative Dielectric Permittivity; Weak Electric Field; Trap Concentration;
D O I：
10.1134/S0020168510020056
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The current (electrical transport) through In/ZnGa2Se4/In structures has been measured as a function of temperature and applied electric field at temperatures from 77 to 400 K in fields from 10 to 3 x 10(4) V/cm. The results are analyzed in terms of the Poole-Frenkel effect and space-charge-limited currents. The activation energy of traps and trap concentration in ZnGa2Se4 and its refractive index are determined to be E (t)= 0.8 eV, N (t) = 4 x 10(13) cm(-3), and n = 2.4, respectively.
引用
收藏
页码：116 / 119
页数：4
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