Electric-field and temperature effects on electric currents in polycrystalline ZnGa2Se4

被引：1
|
作者：
Georgobiani, A. N. [1 ]
Tagiev, B. G. [2 ]
Tagiev, O. B. [2 ]
Kerimova, T. G. [2 ]
Abushov, S. A. [2 ]
Asadullaeva, S. G. [2 ]
机构：
[1] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, Russia
[2] Azerbaijan Acad Sci, Inst Phys, AZ-1143 Baku, Azerbaijan
来源：
INORGANIC MATERIALS | 2010年 / 46卷 / 02期
关键词：
Applied Electric Field; Electric Field Effect; Relative Dielectric Permittivity; Weak Electric Field; Trap Concentration;
D O I：
10.1134/S0020168510020056
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The current (electrical transport) through In/ZnGa2Se4/In structures has been measured as a function of temperature and applied electric field at temperatures from 77 to 400 K in fields from 10 to 3 x 10(4) V/cm. The results are analyzed in terms of the Poole-Frenkel effect and space-charge-limited currents. The activation energy of traps and trap concentration in ZnGa2Se4 and its refractive index are determined to be E (t)= 0.8 eV, N (t) = 4 x 10(13) cm(-3), and n = 2.4, respectively.
引用
收藏
页码：116 / 119
页数：4
相关论文
共 50 条
  • [1] Electric-field and temperature effects on electric currents in polycrystalline ZnGa2Se4
    A. N. Georgobiani
    B. G. Tagiev
    O. B. Tagiev
    T. G. Kerimova
    S. A. Abushov
    S. G. Asadullaeva
    Inorganic Materials, 2010, 46 : 116 - 119
  • [2] Neutron and electron diffraction studies of ZnGa2Se4
    Hanada, T
    Izumi, F
    Nakamura, Y
    Nittono, O
    Huang, Q
    Santoro, A
    PHYSICA B, 1997, 241 : 373 - 375
  • [3] Structural peculiarities and photoluminescence of ZnGa2Se4 compound
    Tagiyev, B. G.
    Tagiyev, O. B.
    Kerimova, T. G.
    Guseynov, G. G.
    Asadullayeva, S. G.
    PHYSICA B-CONDENSED MATTER, 2009, 404 (23-24) : 4953 - 4955
  • [4] Structure and photoluminescence of ZnGa2Se4:Eu2+
    A. N. Georgobiani
    B. G. Tagiev
    G. G. Guseinov
    T. G. Kerimova
    O. B. Tagiev
    S. G. Asadullaeva
    Inorganic Materials, 2010, 46 : 456 - 459
  • [5] LOW-TEMPERATURE HEAT CAPACITY OF ZnGa2S4, ZnGa2Se4, AND ZnGa2Te4 THIOGALLATES.
    Veliev, R.K.
    Aldzhanov, M.A.
    Physica Status Solidi (A) Applied Research, 1985, 91 (01):
  • [6] Structural peculiarities and photoluminescence of ZnGa2Se4 compound
    Institute of Physics of Azerbaijan NAS, 33, H. Javid ave., AZ-1143, Baku, Azerbaijan
    不详
    Phys B Condens Matter, 2009, 23-24 (4953-4955):
  • [7] Infrared photoluminescence and dynamic properties of ZnGa2Se4
    Asadullayeva, S. G.
    Ismayilova, N. A.
    Naghiyev, T. G.
    MODERN PHYSICS LETTERS B, 2023, 37 (34):
  • [8] Optical phonon modes and structure of ZnGa2Se4 and ZnGa2S4
    Eifler, A
    Krauss, G
    Riede, V
    Krämer, V
    Grill, W
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2005, 66 (11) : 2052 - 2057
  • [9] Neutron and electron diffraction studies of ZnGa2Se4
    Tokyo Inst of Technology, Tokyo, Japan
    Phys B Condens Matter, (373-375):
  • [10] Raman scattering in ZnGa2Se4 single crystals
    Kerimova, T. G.
    Mamedova, I. A.
    Abdullayev, N. A.
    Asadullayeva, S. Q.
    Badalova, Z. I.
    SEMICONDUCTORS, 2014, 48 (07) : 868 - 871
12345