PHASE CHANGE MATERIALS: CHEMICAL BONDING AND STRUCTURAL PROPERTIES

被引:0
|
作者
Velea, Alin [1 ,2 ]
Popescu, Mihai [1 ,2 ]
机构
[1] Natl Inst Mat Phys, Bucharest 077125, Ilfov, Romania
[2] Horia Hulubei Fdn, Bucharest, Romania
关键词
Phase change materials; Switching mechanism; GeSbTe;
D O I
暂无
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The phase change materials are the most important materials in the class of chalcogenides (combination of chalcogens (S, Se and Te) with metalloids or metals). The outstanding property of these materials is the switching from a high electrical resistivity state to low electrical resistivity state and back under a moderate voltage. The thin film materials are used in computer memories, CD and DVD devices with performing speed and storage capacity. We have studied several thin solid films made of Ge-Sb-Te in order to assess the switching quality of different compositions. In order to systemize the whole class of chalcogenide phase change materials we have investigated the correlation between different crystallo-chemical parameters and the ionicity of the elements. Binary and ternary compounds are distributed into several distinct groups. The most favorable phase change materials are situated in a specific range of mean ionicity and mean glass formation ability. The results give the possibility to design new compositions with better switching properties.
引用
收藏
页码:230 / 236
页数:7
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