From the Kohn-Sham band gap to the fundamental gap in solids. An integer electron approach

被引:48
|
作者
Baerends, E. J. [1 ]
机构
[1] Vrije Univ, Theoret Chem Sect, Amsterdam, Netherlands
关键词
DENSITY-FUNCTIONAL THEORY; EXCHANGE-CORRELATION POTENTIALS; SELF-ENERGY OPERATORS; RANGE CHARGE-TRANSFER; OPEN-SHELL MOLECULES; ORBITAL ENERGIES; DERIVATIVE DISCONTINUITIES; IONIZATION-POTENTIALS; ASYMPTOTIC-BEHAVIOR; LOCAL POTENTIALS;
D O I
10.1039/c7cp02123b
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
It is often stated that the Kohn-Sham occupied-unoccupied gap in both molecules and solids is "wrong''. We argue that this is not a correct statement. The KS theory does not allow to interpret the exact KS HOMO-LUMO gap as the fundamental gap (difference (I - A) of electron affinity (A) and ionization energy (I), twice the chemical hardness), from which it indeed differs, strongly in molecules and moderately in solids. The exact Kohn-Sham HOMO-LUMO gap in molecules is much below the fundamental gap and very close to the much smaller optical gap ( first excitation energy), and LDA/GGA yield very similar gaps. In solids the situation is different: the excitation energy to delocalized excited states and the fundamental gap (I - A) are very similar, not so disparate as in molecules. Again the Kohn-Sham and LDA/GGA band gaps do not represent (I - A) but are significantly smaller. However, the special properties of an extended system like a solid make it very easy to calculate the fundamental gap from the ground state (neutral system) band structure calculations entirely within a density functional framework. The correction (sic) from the KS gap to the fundamental gap originates from the response part v(resp) of the exchange-correlation potential and can be calculated very simply using an approximation to v(resp). This affords a calculation of the fundamental gap at the same level of accuracy as other properties of crystals at little extra cost beyond the ground state bandstructure calculation. The method is based on integer electron systems, fractional electron systems (an ensemble of N- and (N + 1)-electron systems) and the derivative discontinuity are not invoked.
引用
收藏
页码:15639 / 15656
页数:18
相关论文
共 50 条
  • [1] The Kohn-Sham gap, the fundamental gap and the optical gap: the physical meaning of occupied and virtual Kohn-Sham orbital energies
    Baerends, E. J.
    Gritsenko, O. V.
    van Meer, R.
    [J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2013, 15 (39) : 16408 - 16425
  • [2] Can the Kohn-Sham gap be larger than the fundamental gap?
    Kety, Kossi
    Joubert, Daniel
    [J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2024, 26 (37) : 24624 - 24630
  • [3] Kohn-Sham potential with discontinuity for band gap materials
    Kuisma, M.
    Ojanen, J.
    Enkovaara, J.
    Rantala, T. T.
    [J]. PHYSICAL REVIEW B, 2010, 82 (11)
  • [4] Generalized Kohn-Sham schemes and the band-gap problem
    Seidl, A
    Gorling, A
    Vogl, P
    Majewski, JA
    Levy, M
    [J]. PHYSICAL REVIEW B, 1996, 53 (07): : 3764 - 3774
  • [5] HARDNESS OF MOLECULES AND THE BAND-GAP OF SOLIDS WITHIN THE KOHN-SHAM FORMALISM - A PERTURBATION-SCALING APPROACH
    GORLING, A
    LEVY, M
    [J]. PHYSICAL REVIEW A, 1995, 52 (06): : 4493 - 4499
  • [6] A new generalized Kohn-Sham method for fundamental band-gaps in solids
    Eisenberg, Helen R.
    Baer, Roi
    [J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2009, 11 (22) : 4674 - 4680
  • [7] The role of edge magnetism on the Kohn-Sham gap and fundamental energy gap of graphene quantum dots with zigzag edges
    Ramos-Castillo, C. M.
    Cifuentes-Quintal, M. E.
    Martinez-Guerra, E.
    de Coss, R.
    [J]. CARBON, 2019, 153 : 89 - 94
  • [8] Understanding band gaps of solids in generalized Kohn-Sham theory
    Perdew, John P.
    Yang, Weitao
    Burke, Kieron
    Yang, Zenghui
    Gross, Eberhard K. U.
    Scheffler, Matthias
    Scuseria, Gustavo E.
    Henderson, Thomas M.
    Zhang, Igor Ying
    Ruzsinszky, Adrienn
    Peng, Haowei
    Sun, Jianwei
    Trushin, Egor
    Goerling, Andreas
    [J]. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2017, 114 (11) : 2801 - 2806
  • [9] Exact Kohn-Sham exchange potential and the gap problem in semiconductors
    Stadele, M
    Majewski, JA
    Vogl, P
    Gorling, A
    [J]. PROCEEDINGS OF THE VII ITALIAN-SWISS WORKSHOP ADVANCES IN COMPUTATIONAL MATERIALS SCIENCE II, 1998, 61 : 59 - 70
  • [10] EXACT KOHN-SHAM DIRECT GAP AT AN INSULATOR-METAL TRANSITION
    JONES, RS
    TRICKEY, SB
    [J]. PHYSICAL REVIEW B, 1987, 36 (06): : 3095 - 3098