High RF Performance AlGaN/GaN HEMT Fabricated by Recess-Arrayed Ohmic Contact Technology

被引：49
|
作者：
Lu, Yang [1 ]
Ma, Xiaohua [2 ]
Yang, Ling [2 ]
Hou, Bin [2 ]
Mi, Minhan [1 ]
Zhang, Meng [2 ]
Zheng, Jiaxin [2 ]
Zhang, Hengshuang [1 ]
Hao, Yue [1 ]
机构：
[1] Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Shaanxi, Peoples R China
[2] Xidian Univ, Sch Adv Mat & Nanotechnol, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Shaanxi, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 06期
基金：
中国国家自然科学基金;
关键词：
AlGaN/GaN HEMT; high efficiency; ohmic contact resistance; patterned etching; power application; RESISTANCE; GANHEMTS; VOLTAGE;
D O I：
10.1109/LED.2018.2828860
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, a high-performance gate-recessed AlGaN/GaN high electron mobility transistor (HEMT) fabricated by the recess-arrayed ohmic contact technology is presented. An array of square columns was etched in the ohmic region, using Ti/Al/Ni/Au metal deposition and rapid annealing to fabricate a low-resistance ohmic contact. By using the transmission line method measurement, an ohmic contact resistance (R-c) of 0.12 Omega . mm is measured, which is 70% lower than that of the reference device. The patterned ohmic contact HEMT (POC HEMT) exhibits the saturation current of 1130 mA/mm at V-ds = 10 V and V-gs = 1 V, with a shift of the knee voltage from 6 V to 3 V. The RF measurement shows the power-added efficiency (PAE) of 71.6% at 5 GHz. After the third harmonic tuning, the PAE of 85.2% and the corresponding power density of 11.2W/mm and power gain of 16.9 dB are obtained. According to the achieved results, the recess-arrayed ohmic contact processed GaN HEMT has a great potential for high RF efficiency and power applications.
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收藏
页码：811 / 814
页数：4
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