Existence of a stable intermixing phase for monolayer Ge on Si(001)

被引：40

作者：

Yeom, HW

Sasaki, M

Suzuki, S

Sato, S

Hosoi, S

Iwabuchi, M

Higashiyama, K

Fukutani, H

Nakamura, M

Abukawa, T

Kono, S

机构：

[1] UNIV TSUKUBA,INST PHYS,TSUKUBA,IBARAKI 305,JAPAN

[2] TOHOKU UNIV,FAC SCI,DEPT PHYS,SENDAI,MIYAGI 98077,JAPAN

来源：

SURFACE SCIENCE | 1997年 / 381卷 / 01期

关键词：

Auger electron diffraction; germanium; growth; low energy electron diffraction (LEED); low index single crystal surfaces; silicon; single crystal epitaxy; x-ray photoelectron spectroscopy;

D O I：

10.1016/S0039-6028(97)00047-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A monolayer adsorption of Ge on a single-domain Si(001)2x1 surface has been investigated by X-ray excited Auger electron diffraction (AED) and scanning tunneling microscopy. Contrary to the common belief, a significant intermixing of Ge down to at least the fourth layer is identified. This intermixing is found to progress to a stable interface alloy phase that develops fully for annealing at 500-600 degrees C. A possible reason for the alloy phase is discussed to be an elastic interaction from the Si(001) surface. (C) 1997 Elsevier Science B.V.

引用

页码：L533 / L539

页数：7

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