Nuclear and ion spins in semiconductor nanostructures

被引:0
|
作者
Poggio, M. [1 ]
Myers, R. C. [1 ]
Steeves, G. M. [1 ]
Stern, N. P. [1 ]
Gossard, A. C. [1 ]
Awschalom, D. D. [1 ]
机构
[1] Univ Calif Santa Barbara, Ctr Spintron & Quantum Computat, Santa Barbara, CA 93106 USA
来源
关键词
dynamic nuclear polarization; ODNMR; dilute magnetic semiconductors; GaMnAs; quantum well;
D O I
10.1016/j.physe.2006.08.032
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Spin interactions are studied between conduction band electrons in GaAs heterostructures and local moments, specifically the spins of constituent lattice nuclei and of partially filled electronic shells of impurity atoms. Nuclear spin polarizations are addressed through the contact hyperfine interaction resulting in the development of a method for high-field optically detected nuclear magnetic resonance sensitive to 10(8) nuclei. This interaction is then used to generate nuclear spin polarization profiles within a single parabolic quantum well; the position of these nanometer-scale sheets of polarized nuclei can be shifted along the growth direction using an externally applied electric field. In order to directly investigate ion spin dynamics, doped GaMnAs quantum wells are fabricated in the regime of very low Mn concentrations. Measurements of coherent electron spin dynamics show an antiferromagnetic exchange between s-like conduction band electrons and electrons localized in the d-shell of the Mn impurities, which varies as a function of well width. (c) 2006 Published by Elsevier B.V.
引用
收藏
页码:264 / 271
页数:8
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