Dynamic-QGD of Enhancement-mode AlGaN/GaN MIS-HEMTs Induced by Bulk/Interface States in SiNx Passivation Dielectric

被引：0
|
作者：
Yao, Yixu [1 ]
Jiang, Qimeng [1 ]
Huang, Sen [1 ,2 ]
Wang, Xinhua [1 ,2 ]
Jin, Hao [1 ,2 ]
Dai, Xinyue [1 ,2 ]
Fan, Jie [1 ]
Yin, Haibo [1 ]
Wei, Ke [1 ,2 ]
Liu, Xinyu [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
来源：
2022 19TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING & 2022 8TH INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS, SSLCHINA: IFWS | 2022年
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1109/SSLChinaIFWS57942.2023.10071109
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Effect of bulk/interface states in passivation dielectrics on dynamic gate-drain capacitance (C-GD) and Q(GD) of GaN-based power devices, was systematically investigated by inductiveload switching, voltage/temperature-dependent capacitancevoltage (C-V) and deep level transient spectroscopy (DLTS). DLTS measurements confirm that a continuous distributed bulk state with activation energy (E-C-E-T) higher than 1.1 +/- 0.05 eV, presents in SiNx passivation dielectric grown by lowpressure chemical vapor deposition (LPCVD). It is revealed that the trapping/de-trapping of these bulk states will give rise to Q(GD) instability in T-shape gate enhancement- mode (Emode) AlGaN/GaN MIS-HEMTs (metal-insulatorsemiconductor high-electron-mobility transistors), leading to undesirable degradation of switching characteristics.
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页码：87 / 91
页数：5
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