Instability of parasitic capacitance in T-shape-gate enhancement-mode AlGaN/GaN MIS-HEMTs

被引：5
|
作者：
Bi, Lan [1 ,2 ]
Yao, Yixu [1 ,2 ]
Jiang, Qimeng [1 ,2 ]
Huang, Sen [1 ,2 ]
Wang, Xinhua [1 ,2 ]
Jin, Hao [1 ,2 ]
Dai, Xinyue [1 ,2 ]
Xu, Zhengyuan [1 ]
Fan, Jie [1 ,2 ]
Yin, Haibo [1 ,2 ]
Wei, Ke [1 ,2 ]
Liu, Xinyu [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, High Frequency High Voltage Device & Integrated C, Beijing 100029, Peoples R China
[2] Univ Chinese Acad Sci, Inst Microelect, Beijing 100049, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2022年 / 43卷 / 03期
基金：
中国国家自然科学基金;
关键词：
AlGaN/GaN MIS-HEMTs; enhancement-mode; T-shape gate; parasitic capacitance; trapping/de-trapping; capacitance-voltage hysteresis; HETEROSTRUCTURE; SUPPRESSION; TRANSISTORS; TECHNOLOGY;
D O I：
10.1088/1674-4926/43/3/032801
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Parasitic capacitances associated with overhangs of the T-shape-gate enhancement-mode (E-mode) GaN-based power device, were investigated by frequency/voltage-dependent capacitance-voltage and inductive-load switching measurements. The overhang capacitances induce a pinch-off voltage distinguished from that of the E-mode channel capacitance in the gate capacitance and the gate-drain capacitance characteristic curves. Frequency- and voltage-dependent tests confirm the instability caused by the trapping of interface/bulk states in the LPCVD-SiNx passivation dielectric. Circuit-level double pulse measurement also reveals its impact on switching transition for power switching applications.
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页数：4
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