Low frequency noise variability in ultra scaled FD-SOI n-MOSFETs: Dependence on gate bias, frequency and temperature

被引：12
|
作者：
Theodorou, C. G. [1 ]
Ioannidis, E. G. [1 ]
Haendler, S. [3 ]
Josse, E. [3 ]
Dimitriadis, C. A. [2 ]
Ghibaudo, G. [1 ]
机构：
[1] INPG Minatec, IMEP LAHC, F-38016 Grenoble, France
[2] Aristotle Univ Thessaloniki, Dept Phys, Thessaloniki 54124, Greece
[3] STMicroelectronics, F-38921 Crolles, France
来源：
SOLID-STATE ELECTRONICS | 2016年 / 117卷
关键词：
Low-frequency noise; Noise variability; RTN; FD-SOI MOSFETs; CMOS DEVICES; TRANSISTORS; NMOSFETS;
D O I：
10.1016/j.sse.2015.11.011
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a parametric statistical analysis of the low-frequency noise (LFN) in very small area (W L approximate to 10(3) mu m(2)) 14 nm fully depleted silicon-on-insulator (FD-SOI) n-MOS devices is presented. It has been demonstrated that the LFN origin is due to carrier trapping/detrapping into gate dielectric traps near the interface and the mean noise level in such small area MOSFETs is well approached by the carrier number fluctuations model in all measurement conditions. The impact of gate voltage bias and temperature on the LFN variability, as well as the standard deviation dependence on frequency have been studied for the first time, focusing on their relation to the Random Telegraph Noise (RTN) effect and its characteristics. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码：88 / 93
页数：6
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