Gravity effect on dissolution and growth of GaSb by liquid-phase epitaxy

被引：0

作者：

Kanai, H ^{[1
]}

Kimura, M ^{[1
]}

Dost, S ^{[1
]}

Tanaka, A ^{[1
]}

Sukegawa, T ^{[1
]}

机构：

[1] SHIZUOKA UNIV,ELECT RES INST,HAMAMATSU,SHIZUOKA 432,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 174卷 / 1-4期

关键词：

D O I：

10.1016/S0022-0248(96)01109-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The effect of gravity on both dissolution and growth of GaSb in Ga-Sb system has been investigated using a horizontal ''sandwich'' system consisting of a substrate-solution-substrate configuration. It was found that the dissolution of the lower substrate was much larger than that of the upper one, while the thickness of the epitaxial layer on the upper substrate was larger than that on the lower substrate. These phenomena were attributed to the solutal convection driven by concentration gradient. In order to observe such a phenomenon, the solute must have a smaller density than that of solvent. To confirm this point, it was demonstrated that epitaxial layers of GaSb could be grown by the yo-yo solute feeding method.

引用

页码：226 / 229

页数：4

共 50 条

[1] GROWTH AND CHARACTERIZATION OF GASB EPILAYERS BY LIQUID-PHASE EPITAXY
SU, YK
JUANG, FS
[J]. JOURNAL OF MATERIALS SCIENCE, 1990, 25 (2A) : 843 - 847
[2] GRAVITY EFFECT ON LIQUID-PHASE EPITAXY OF SI
KANAI, H
MOTOYAMA, S
KIMURA, M
TANAKA, A
SUKEGAWA, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1993, 128 (1-4) : 310 - 313
[3] LIQUID-PHASE EPITAXY GROWTH AND PROPERTIES OF GAINASSB/ALGAASSB/GASB HETEROSTRUCTURES
GONG, XY
YANG, BH
MA, YD
GAO, FS
YU, Y
HAN, WJ
LUI, XF
XI, JY
WANG, ZG
LIN, LY
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (07): : 1343 - 1347
[4] SELECTIVE LIQUID-PHASE EPITAXY OF ALGAINSB ON GASB SUBSTRATES
LENDVAY, E
PETRAS, L
GEVORKYAN, VA
[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 71 (02) : 317 - 325
[5] Growth of GaSb/GalnAsSb/GaSb heteroestructure by Liquid Phase Epitaxy
Fernando Gomez, Jose
Patricia Cardona, Ana
de los Rios, Marianela
Tirado Trujillo, Liliana
Ariza Calderon, Hernando
[J]. REVISTA DE INVESTIGACIONES-UNIVERSIDAD DEL QUINDIO, 2009, 19 : 23 - 27
[6] GaSb film growth by liquid phase epitaxy
Garcia-Cruz, M. L.
Martinez-Juarez, J.
Lopez-Salazar, P.
Juarez Diaz, G.
[J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4, 2010, 7 (3-4): : 1203 - 1206
[7] LIQUIDUS TEMPERATURE AND GROWTH-DISSOLUTION KINETICS OF GARNET LIQUID-PHASE EPITAXY
GIESS, EA
FAKTOR, MM
FRANK, FC
[J]. JOURNAL OF CRYSTAL GROWTH, 1979, 46 (05) : 620 - 622
[8] REVERSAL IN THE GROWTH OR DISSOLUTION OF III-V-HETEROSTRUCTURES BY LIQUID-PHASE EPITAXY
SMALL, MB
GHEZ, R
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 926 - 930
[9] LIQUID-PHASE EPITAXY (LPE) OF GAAS IN LOW GRAVITY
LIND, MD
IMMORLICA, AA
KROES, RL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C137 - C137
[10] GROWTH AND CHARACTERIZATION OF HIGH-QUALITY GAINASSB LAYERS ON GASB SUBSTRATES BY LIQUID-PHASE EPITAXY
WU, MC
CHEN, CC
LEE, CT
[J]. SOLID-STATE ELECTRONICS, 1992, 35 (04) : 523 - 528

← 1 2 3 4 5 →