Temperature dependence of photoluminescence from CdSe nanocrystals embedded in silica matrix

被引：2

作者：

Chahboun, A. ^{[1
,2
]}

Levichev, S. ^{[1
]}

Rolo, A. G. ^{[1
]}

Conde, O. ^{[3
]}

Gomes, M. J. M. ^{[1
]}

机构：

[1] Univ Minho, Ctr Fis, P-4710057 Braga, Portugal

[2] FSDM, Dept Phys, LPS, Fes, Morocco

[3] Univ Lisbon, Dept Phys, P-1699 Lisbon, Portugal

来源：

JOURNAL OF LUMINESCENCE | 2009年 / 129卷 / 10期

关键词：

CdSe; Nanocrystals; Photoluminescence; Temperature dependence; Thermal expansion; QUANTUM DOTS; GAP; SEMICONDUCTORS; ENERGY; FILMS; OXIDE;

D O I：

10.1016/j.jlumin.2009.06.007

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this work, CdSe nanocrystals (NCs) embedded in SiO2 matrix were grown by radio frequency (RF)sputtering technique. X-ray technique was used to characterise the structural properties of the system. The NC's size was estimated to be around 4 +/- 1 nm in diameter. The temperature dependence of the photoluminescence from the CdSe/SiO2 System showed carriers thermal exchange between the NCs and deep defects in the matrix. The evolution of the excitonic energy emission with temperature is about 10 meV in the temperature range 15-295 K. This weak shift was explained by thermal mismatch between the matrix and the NCs. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1235 / 1238

页数：4

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