Particle Cleaning of EUV Reticles

被引:7
|
作者
Scaccabarozzi, Luigi [1 ]
Lammers, Niels A. [2 ]
Moors, Roel [1 ]
Banine, Vadim [1 ]
机构
[1] ASML Netherlands BV, NL-5504 DR Veldhoven, Netherlands
[2] Tech Univ Eindhoven, NL-5612 AZ Eindhoven, Netherlands
关键词
EUV; reticle; mask; mask cleaning; particle removal; laser shockwave cleaning; high voltage cleaning; LASER-INDUCED PLASMA; ELECTROSTATIC REMOVAL; NANOPARTICLE REMOVAL;
D O I
10.1163/156856109X440975
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
Due to absorption of EUV light, EUV reticles are not likely to have pellicles for particulate contamination protection, thus even nanosize particles on the reticle could result in fatal defects in every printed die. Consequently, measures must be taken to detect and remove particles above a certain critical size that are deposited on the reticle in the course of its use. In this paper we first present the very stringent requirements that a cleaning technique must satisfy in order to be employed for EUV reticle cleaning. The main challenges consist in the capability of removing very small particles (sub-100 nm), in principle of any type (organic/inorganic) and without damage to the reticle. We then focus on two of the techniques that we are investigating, laser shockwave cleaning (LSC) and high voltage cleaning (HVC). Both of them are dry techniques, which is a necessary requirement in view of their potential integration in the lithography tool. We finally present cleaning and damage tests results, including cleaning of 40-nm polystyrene-latex (PSL) spheres on large areas. (C) Koninklijke Brill NV, Leiden, 2009
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页码:1603 / 1622
页数:20
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