A kinetic scanning tunneling microscopy study of iron silicide growth on Si(113)

被引：8

作者：

Kneppe, M ^{[1
]}

Dorna, V ^{[1
]}

Kohstall, P ^{[1
]}

Kot, E ^{[1
]}

Köhler, U ^{[1
]}

机构：

[1] Ruhr Univ Bochum, D-44780 Bochum, Germany

来源：

SURFACE SCIENCE | 2000年 / 454卷

关键词：

low energy electron diffraction (LEED); metal-semiconductor nonmagnetic thin film structures; scanning tunneling microscopy; silicides; single crystal epitaxy;

D O I：

10.1016/S0039-6028(00)00275-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

High-temperature kinetic scanning tunneling microscopy (STM) studies are used to investigate the surface morphology and growth mode of iron silicide on Si(113) formed by gas-source reactive iron deposition with Fe(CO)(5) as precursor. The first monolayer of silicide on Si(113) forms a (4 x n) reconstruction that covers the surface completely before growth proceeds via the formation of strongly anisotropic, three-dimensional silicide islands. After the first monolayer is closed, growth is slowed down by a blocked interdiffusion with the silicon substrate and a reduced sticking probability for the precursor. Lateral spreading of the islands is achieved by a stoichiometric codeposition of iron and silicon using Fe(CO)(5) and Si2H6. In this way, nearly closed layers of silicide can be grown. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：802 / 806

页数：5

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