Frequency Scalable Model for MEMS Capacitive Shunt Switches at Millimeter-Wave Frequencies

被引：25
|
作者：
Puyal, Vincent [1 ,2 ]
Dragomirescu, Daniela [1 ,2 ]
Villeneuve, Christina [1 ,2 ]
Ruan, Jinyu [1 ,2 ]
Pons, Patrick [1 ,2 ]
Plana, Robert [1 ,2 ]
机构：
[1] CNRS, LAAS, F-31077 Toulouse, France
[2] Univ Toulouse 3, Inst Natl Sci Appl, INP, ISAE,LAAS, F-31077 Toulouse, France
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2009年 / 57卷 / 11期
关键词：
Capacitive; modeling; phase shifters; RF microelectromechanical systems (MEMS); shunt switches;
D O I：
10.1109/TMTT.2009.2032473
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents an approach to RF microelectromechanical systems (MEMS) capacitive shunt switch design from K-band up to W-band based on the scalability of the RF MEMS switch with frequency. The parameters of the switch's equivalent-circuit model also follow scaling rules. The measurement results of the fabricated switches show an excellent agreement with simulations that allow to validate the MEMS model in the entire band from 20 up to 94 GHz. This model is going to be used in the phase shifter circuit design for antenna array applications. The first 60-GHz phase shifter results are also reported here.
引用
收藏
页码：2824 / 2833
页数：10
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