Transition Metal Silicide Nanowires Growth and Electrical Characterization

被引：2
|
作者：
Peng Zu-Lin [1 ]
Liang, S. [2 ]
Deng Luo-Gen [1 ]
机构：
[1] Beijing Inst Technol, Sch Sci, Beijing 100081, Peoples R China
[2] Arizona State Univ, Sci & Engn Mat Program, Tempe, AZ 85287 USA
来源：
CHINESE PHYSICS LETTERS | 2009年 / 26卷 / 12期
基金：
中国国家自然科学基金;
关键词：
OPTICAL-PROPERTIES; SI(001);
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report the characterization of self-assembled epitaxially grown transition metal, Fe, Co, Ni, silicide nanowires (TM-NW) growth and electrical transport properties. NWs grown by reactive deposition epitaxy on various silicon surfaces show a dimension of 10nm by 5nm, and several micrometers in length. NW orientations strongly depend on substrate crystal orientation, and follow the substrate symmetry. By using conductive-AFM (c-AFM), the electron transport properties of one single NW were measured, the resistivity of crystalline nickel silicide NW was estimated to be 2 x 10(-2) Omega.cm.
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页数：4
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