Optimizing Component Reliability in Datacenters using Predictive Models

被引:0
|
作者
Daniel, Abishai [1 ]
Ahuja, Nishi [1 ]
机构
[1] Intel Corp, 2501 NW 229th Ave, Hillsboro, OR 97124 USA
关键词
Component reliability; gate oxide (TDDB) mechanism; predictive statistical models; Monte Carlo models;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Prior studies have demonstrated component silicon reliability sensitivity to datacenter cooling strategies that include containment and non-containment cooling with return side setpointing. In this work, the evaluations were compared to supply side setpointing to understand the optimal approach to datacenter cooling. This was accomplished through the development of predictive models of T-inlet as a function of T-setpoint. These models were subsequently used for tradeoff analyses to quantitatively evaluate possible ways to leveraging of the improved reliability. Specifically, to reduce data center costs and/or improve performance. Performance tradeoff estimates were based on experimental lab data.
引用
收藏
页码:324 / 326
页数:3
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