Differential Reflective Metrology An innovative variability measurement for advanced FDSOI material

被引：1
|
作者：
Billiez, J-M [1 ]
Schwarzenbach, W. [1 ]
机构：
[1] SOITEC, Parc Technol Fontaines, F-38190 Bernin, France
来源：
2020 21ST INTERNATIONAL CONFERENCE ON THERMAL, MECHANICAL AND MULTI-PHYSICS SIMULATION AND EXPERIMENTS IN MICROELECTRONICS AND MICROSYSTEMS (EUROSIME) | 2020年
关键词：
SUBSTRATE DEVELOPMENT; SOI;
D O I：
10.1109/eurosime48426.2020.9152621
中图分类号：
O414.1 [热力学];
学科分类号：
摘要：
Thickness control is one of the key parameter to limit fully-depleted device variability. Differential Reflective Metrology (DRM) has been initially developed to measure SOI layer thickness variability at device scale. A 2nd generation DRM is proposed, both SOI & BOX layers thickness variability being now measured independently to each other, from device to wafer scale.
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页数：2
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