Role of spin, phonon and plasmon dynamics on ferromagnetism in Cr doped 3C-SiC

被引:4
|
作者
Moharana, Gyanti Prakash [1 ]
Kothari, Rahul [1 ]
Narayanan, Harish Kumar [1 ]
Singh, S. K. [2 ]
机构
[1] Indian Inst Technol Madras, Dept Phys, Chennai 600036, Tamil Nadu, India
[2] CSIR Innovat Ctr Plasma Proc, IMMT, Bhubaneswar 751013, India
关键词
Dilute magnetic semiconductor; Electron paramagnetic resonance; Longitudinal optical plasmon coupling mode; 3C-SiC; Bound magnetic polaron; ELECTRON-PARAMAGNETIC-RESONANCE; RAMAN-SCATTERING; MAGNETIC-PROPERTIES; SPECTROSCOPY;
D O I
10.1016/j.jmmm.2019.165505
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report the structural stability and magnetic interaction in Cr doped 3C-SiC synthesized by Thermal Plasma Technique. The EPR spectrum of undoped 3C-SiC shows a sharp resonance line corresponding to g = 2.00 associated with the defects present in the system. Anomalous temperature evolution tendency of the relative intensity of EPR spectra can be attributed to magnetically correlated defects in the host matrix. We also report detailed studies of magnetic susceptibility, X and Q-band EPR studies and their temperature variations which helps to understand the possible electronic state of the Cr which is supposed to occupy the substitutional site of the tetravalent Si in the lattice. The nonmonotonous variation of Longitudinal Mode (LO) of the Raman spectra has been explained based on the interaction between carriers and surface plasmon using Longitudinal optical plasmon coupling mode (LOPC). The carrier density calculated by using LOPC fit with experimental data varies from 1.8 x 10(15) to 4.2 x 10(17) cm(-3). Room temperature magnetic measurements exhibit ferromagnetic behavior with non-zero coercivity for all the samples up to 7T field. The Curie temperature of the samples have been found to be above 760 K. Quantitative analysis of magnetic interaction validates the applicability of Bound Magnetic Polaron Model (BMP) which probably arises from the exchange interaction of Cr3+ ions with related (Si, C) defects. The polaron density estimated from the BMP fit agrees well with the carrier density obtained from the line shape fitting of Raman spectra.
引用
收藏
页数:12
相关论文
共 50 条
  • [41] On the nanoscaled defects of 3C-SiC
    Mantzari, A.
    Andreadou, A.
    Chandran, N.
    Marinova, M.
    Polychroniadis, E. K.
    INTERNATIONAL JOURNAL OF NANOTECHNOLOGY, 2014, 11 (5-8) : 539 - 548
  • [42] Optical Properties of Ni doped 3C-SiC with ab initio calculations
    Houmad, M.
    Abbassi, A.
    Benyoussef, A.
    Ez-Zahraouy, H.
    El Kenz, A.
    2014 INTERNATIONAL RENEWABLE AND SUSTAINABLE ENERGY CONFERENCE (IRSEC), 2014, : 596 - 600
  • [43] Waveguides and modulators in 3C-SiC
    Kewell, A
    Vonsovici, A
    Reed, GT
    Evans, AGR
    SILICON-BASED AND HYBRID OPTOELECTRONICS III, 2001, 4293 : 54 - 62
  • [44] Stress dependence of the cathodoluminescence spectrum of N-doped 3C-SiC
    Porporati, Alessandro Alan
    Hosokawa, Koichiro
    Zhu, Wenliang
    Pezzotti, Giuseppe
    JOURNAL OF APPLIED PHYSICS, 2006, 100 (09)
  • [45] Highly nitrogen doped 3C-SiC grown by liquid phase epitaxy
    Nikolaev, AE
    Nikitina, IP
    Dmitriev, VA
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 125 - 128
  • [46] Characterization of Mn-doped 3C-SiC prepared by ion implantation
    Takano, Fumiyoshi
    Wang, Wenhong
    Akinaga, Hiro
    Ofuchi, Hironori
    Hishiki, Shigeomi
    Ohshima, Takeshi
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (09)
  • [47] Characterization of Mn-doped 3C-SiC prepared by ion implantation
    Nanotechnology Research Institute , National Institute of Advanced Industrial Science and Technology , 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
    不详
    不详
    Journal of Applied Physics, 2007, 101 (09):
  • [48] Magnetic properties of 3C-SiC nanowires doped by transition metal and vacancy
    Su, Jianing
    Yang, Ying
    Zhang, Xuhui
    Guo, Ping
    CHEMICAL PHYSICS LETTERS, 2020, 754 (754)
  • [49] Microstructure and magnetic properties of Mn-doped 3C-SiC nanowires
    Tian, Y.
    Zheng, H. W.
    Liu, X. Y.
    Li, S. J.
    Zhang, Y. J.
    Hu, J. F.
    Lv, Z. C.
    Liu, Y. F.
    Gu, Y. Z.
    Zhang, W. F.
    MATERIALS LETTERS, 2012, 76 : 219 - 221
  • [50] Role of Substrate Misorientation in Relaxation of 3C-SiC Layers on Silicon
    Zielinski, M.
    Portail, M.
    Roy, S.
    Kret, S.
    Chassagne, T.
    Nemoz, M.
    Cordier, Y.
    SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 169 - 172