Band gap engineering and low temperature transport phenomenon in highly conducting antimony doped tin oxide thin films

被引：26
|
作者：
Rana, M. P. S. [1 ]
Singh, Fouran [2 ]
Negi, Sandhya [1 ]
Gautam, Subodh K. [2 ]
Singh, R. G. [3 ]
Ramola, R. C. [1 ]
机构：
[1] HNB Garhwal Univ, Dept Phys, Badshahi Thaul Campus, Tehri Garhwal 249199, India
[2] Inter Univ Accelerator Ctr, Aruna Asaf Ali Marg, New Delhi 110067, India
[3] Univ Delhi, Bhagini Nivedita Coll, Dept Phys, Delhi 110023, India
来源：
CERAMICS INTERNATIONAL | 2016年 / 42卷 / 05期
关键词：
Transparent Conducting Oxide (TCO); Burstein-Moss (BM) shift; Quantum Confinement; Amorphization; Nearest neighbour hopping (NNH) and Variable Range Hopping (VRH); HEAVY-ION IRRADIATION; OPTICAL-PROPERTIES; PHASE-TRANSITION; SEMICONDUCTORS; NANOCRYSTALS; SCIENCE; SURFACE;
D O I：
10.1016/j.ceramint.2015.12.141
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A huge band gap tuning and low temperature transport phenomenon in highly transparent antimony doped tin oxide thin film (Sb:SnO2) under the influence of swift heavy ions irradiation (SHII) is reported. Structural analysis shows an enhancement in crystallinity at initial fluence of irradiation followed by amorphization at higher fluences. Films were also well studied for their surface morphology by atomic force microscopy and scanning electron microscopy. Band gap analysis reveals a drastic band gap narrowing around 1.1 eV upon SHI irradiation. Transport measurements show that the high conductivity and the carrier concentration decrease upon increase in the fluence of irradiation. The mechanism of charge carrier transport investigated at low temperature is attributed to nearest neighbor hopping (NNH) and variable range hopping (VRH) in different temperature regimes. Origin of the band gap tuning is understood in framework of Burstein Moss (BM) shift, Quantum Confinement (QC) effect and band-tailing states in amorphous semiconductors. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码：5932 / 5941
页数：10
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