Conductivity Modulated On-axis 4H-SiC 10+kV PiN Diodes

被引：0

作者：

Salemi, Arash ^{[1
]}

Elahipanah, Hossein ^{[1
]}

Buono, Benedetto ^{[2
]}

Hallen, Anders ^{[1
]}

Hassan, Jawad Ul ^{[3
]}

Bergman, Peder ^{[3
]}

Malm, Gunnar ^{[1
]}

Zetterling, Carl-Mikael ^{[1
]}

Ostling, Mikael ^{[1
]}

机构：

[1] KTH Royal Inst Technol Integrated Devices & Circu, S-16440 Kista, Sweden

[2] Fairchild Semicond, S-16440 Kista, Sweden

[3] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden

来源：

2015 IEEE 27TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD) | 2015年

关键词：

On-axis; 4H-SiC; PiN diode; ultrahigh-voltage; lifetime enhancement; V-F; on-resistance; OCVD; breakdown voltage; bipolar degradation-free;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Degradation-free ultrahigh-voltage (> 10 kV) PiN diodes using on-axis 4H-SiC with low forward voltage drop (V-F = 3.3 V at 100 A/cm(2)) and low differential on-resistance (R-ON = 3.4 m Omega.cm(2)) are fabricated, measured, and analyzed by device simulation. The devices show stable on-state characteristics over a broad temperature range up to 300 degrees C. They show no breakdown up to 10 kV, i.e., the highest blocking capability for 4H-SiC devices using on-axis to date. The minority carrier lifetime (tau(P)) is measured after epitaxial growth by time resolved photoluminescence (TRPL) technique at room temperature. The tau(P) is measured again after device fabrication by open circuit voltage decay (OCVD) up to 500 K.

引用

页码：269 / 272

页数：4

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