Nanostructuring in submicron-level waveguides with femtosecond laser pulses

被引：12
|
作者：
Li, M
Ishizuka, M
Liu, XB
Sugimoto, Y
Ikeda, N
Asakawa, K
机构：
[1] Panason Boston Lab, Cambridge, MA 02142 USA
[2] Femtosecond Technol Res Assoc, Tsukuba, Ibaraki 3002635, Japan
来源：
OPTICS COMMUNICATIONS | 2002年 / 212卷 / 1-3期
关键词：
D O I：
10.1016/S0030-4018(02)01956-9
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A series of 200-nm-wide 200-nm-deep cylindrical air holes were drilled on 660-nm-wide Si-on-SiO2 waveguide with frequency-doubled Ti:Sapphire femtosecond laser pulses by direct laser ablation. Precise alignment between the laser beam and the existing narrow waveguide was achieved under optical illumination. This ultrafast laser proves to be a promising tool for producing small features on submicron-level devices, and a good candidate for device real-time tuning or fast prototyping. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：159 / 163
页数：5
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