Selective Area Growth of InGaN/GaN Nanocolumnar Heterostructures by Plasma-Assisted Molecular Beam Epitaxy

被引：3
|
作者：
Albert, S. [1 ]
Bengoechea-Encabo, A. M. [1 ]
Sanchez-Garcia, M. A. [1 ]
Calleja, E. [1 ]
机构：
[1] Univ Politecn Madrid, ETSI Telecomunicac, Madrid, Spain
来源：
III-NITRIDE SEMICONDUCTOR OPTOELECTRONICS | 2017年 / 96卷
关键词：
GAN NANOCOLUMNS; PHOTOLUMINESCENCE; MORPHOLOGY; BLUE;
D O I：
10.1016/bs.semsem.2016.08.003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：231 / 266
页数：36
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