Effect of inner-shell excitation of disilane on the reaction yield of synchrotron-radiation excited high-vacuum chemical vapor deposition

The reaction yields of synchrotron-radiation excited high-vacuum chemical vapor deposition at the core-excitation and valence-excitation regions of disilane are obtained by measuring both the incident photon numbers of the synchrotron-radiation beams which pass through C and Al filters and the rates of Si deposition induced by these synchroton-radiation beams. It is confirmed that the reaction yield for the core-excitation energy region is about three times larger than the value for the valence-excitation region. It is also demonstrated that synchrotron-radiation excited high-vacuum chemical vapor deposition proceeds by the pure-photochemical reaction, not by the reaction induced by secondary electrons due to synchrotron-radiation irradiation on the substrate. (C) 1997 American Institute of Physics.