Reaction kinetics in synchrotron-radiation-excited Si epitaxy with disilane. II. Photochemical-vapor deposition

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[1] Akazawa, Housei

[2] Utsumi, Yuichi

来源：

Akazawa, Housei | 1600年 / American Inst of Physics, Woodbury, NY, United States卷 / 78期

关键词：

Chemical vapor deposition;

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共 13 条

[1] REACTION-KINETICS IN SYNCHROTRON-RADIATION-EXCITED SI EPITAXY WITH DISILANE .2. PHOTOCHEMICAL-VAPOR DEPOSITION
AKAZAWA, H
UTSUMI, Y
JOURNAL OF APPLIED PHYSICS, 1995, 78 (04) : 2740 - 2750
[2] REACTION-KINETICS IN SYNCHROTRON-RADIATION-EXCITED SI EPITAXY WITH DISILANE .1. ATOMIC LAYER EPITAXY
AKAZAWA, H
UTSUMI, Y
JOURNAL OF APPLIED PHYSICS, 1995, 78 (04) : 2725 - 2739
[3] TEMPERATURE EFFECTS ON SYNCHROTRON-RADIATION-EXCITED SI ATOMIC LAYER EPITAXY USING DISILANE
AKAZAWA, H
APPLIED SURFACE SCIENCE, 1994, 82-3 (1-4) : 394 - 399
[4] SYNCHROTRON-RADIATION PHOTOCHEMICAL-VAPOR DEPOSITION OF AMORPHOUS-CARBON
ENDO, A
TAKAMI, S
OSAWA, T
HONMA, I
KOMIYAMA, H
JOURNAL OF APPLIED PHYSICS, 1995, 77 (07) : 3453 - 3457
[5] Evaluation of thin Si films grown on Ge(100) by synchrotron-radiation-excited atomic layer epitaxy and chemical vapor deposition from Si2H6
Akazawa, H
JOURNAL OF CRYSTAL GROWTH, 1997, 173 (3-4) : 343 - 351
[6] EPITAXIAL SILICON GROWTH-CONDITIONS AND KINETICS IN LOW-TEMPERATURE ARF EXCIMER LASER PHOTOCHEMICAL-VAPOR DEPOSITION FROM DISILANE
FOWLER, B
LIAN, S
KRISHNAN, S
JUNG, L
LI, C
SAMARA, D
MANNA, I
BANERJEE, S
JOURNAL OF APPLIED PHYSICS, 1992, 72 (03) : 1137 - 1148
[7] Morphological transition of Si1-xGex films growing on Si(100).: II.: Synchrotron-radiation-excited chemical-vapor deposition:: From two-dimensional growth to growth in the Volmer-Weber mode
Akazawa, H
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2002, 20 (01): : 60 - 67
[8] Effect of inner-shell excitation of disilane on the reaction yield of synchrotron-radiation excited high-vacuum chemical vapor deposition
Utsumi, Y
JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) : 1482 - 1484
[9] SPECIES-SPECIFIC GROWTH-KINETICS AND FILM PROPERTIES IN SYNCHROTRON RADIATION-EXCITED SI GROWTH WITH DISILANE
AKAZAWA, H
UTSUMI, Y
NAGASE, M
APPLIED SURFACE SCIENCE, 1994, 79-80 (1-4) : 299 - 303
[10] Contribution of dangling-bond regeneration channels in the synchrotron-radiation-excited epitaxy of Si from SiH2Cl2
Akazawa, H
JOURNAL OF APPLIED PHYSICS, 2001, 89 (12) : 8321 - 8326

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