VOC Enhancement of Sub-micron CIGS Solar Cells by Sulfization of the Mo Surface

被引：0
|
作者：
Kim, Kihwan [1 ,2 ]
Xin, Peipei [1 ]
Yun, Laeho [2 ]
Shafarman, William N. [1 ]
机构：
[1] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA
[2] Korea Inst Energy Res, Photovolta Lab, Daejeon 305343, South Korea
来源：
2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | 2015年
关键词：
thin absorber; CIGS; chalcopyrite; back contact; passivation; THICKNESS; SULFUR;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In this work, a Mo/MoS2 back contact was investigated for sub-micron-thick Cu(In,Ga)Se-2 (CIGS) solar cells. With a H2S reaction, 10 and 30 nm-thick MoS2 films were formed on the Mo back contact prior to CIGS film growth with co-evaporation. The MoS2 layers did not significantly affect the microstructure of CIGS films. However, the MoS2 layer was improved the V-OC of CIGS cells by similar to 50 mV. This is attributed to reduced recombination occurring at the CIGS/Mo interface.
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页数：4
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