Epitaxial growth of semi-polar (11-22) plane AlInGaN quaternary alloys on m-plane (10-10) sapphire substrates

被引：1
|
作者：
Rao, Lifeng [1 ]
Zhang, Xiong [1 ]
Fan, Aijie [1 ]
Chen, Shuai [1 ]
Li, Cheng [1 ]
He, Jiaqi [1 ]
Zhuang, Zhe [1 ]
Lyu, Jiadong [2 ]
Hu, Guohua [1 ]
Cui, Yiping [1 ]
机构：
[1] Southeast Univ, Adv Photon Ctr, Nanjing 210096, Jiangsu, Peoples R China
[2] Southeast Univ, Minist Educ, Engn Res Ctr New Light Sources Technol & Equipmen, Nanjing 210096, Jiangsu, Peoples R China
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2021年 / 126卷
基金：
中国国家自然科学基金;
关键词：
Semi-polar (11-22) plane; AlInGaN quaternary alloy; Epitaxial growth; Surface morphology; Crystalline quality; Optical property; Phase separation;
D O I：
10.1016/j.mssp.2021.105660
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The semi-polar (11-22) plane AlInGaN quaternary alloys were grown successfully on the m-plane (10-10) sapphire substrates with metalorganic chemical vapor deposition technology. Optical microscope, atomic force microscope, energy-dispersive X-ray spectroscopy, X-ray diffraction, and room temperature photoluminescence spectroscopy were used to study the effects of V/III ratio and trimethyl-indium flow rate on the characteristics of the grown semi-polar (11-22) plane AlInGaN quaternary alloys. It was found that the In composition of the semi polar (11-22) plane AlInGaN quaternary alloys decreased as the V/III ratio increased. It was also revealed that the surface morphology, crystalline quality, and the optical property could be improved, and the phase separation in the quaternary alloy could be suppressed significantly by optimizing the V/III ratio and the trimethylindium flow rates.
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页数：7
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