Optical absorption edge and some shallow donor levels in LiNbO3 systems

被引：1
|
作者：
Corradi, G
Kovács, L
Zaritskii, IM
机构：
[1] Hungarian Acad Sci, Res Inst Solid State Phys & Opt, Crystal Phys Lab, H-1525 Budapest, Hungary
[2] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-252652 Kiev, Ukraine
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1999年 / 150卷 / 1-4期
基金：
匈牙利科学研究基金会;
关键词：
optical absorption edge; shallow donors; polarons; Jahn-Teller effect; lithium niobate; titanium centers;
D O I：
10.1080/10420159908226232
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
In LiNbO3 the position of the conduction band edge formed by Nb 4d states strongly depends on the presence of antisite niobiums (Nb on Li site) lowering the band edge. Based on this property the measurement of the UV absorption edge can be used for determining the Li/Nb ratio in the crystal with high precision, especially in the near-stoichiometric region where the relative precision is 0.01 mol%. The same Nb states can form shallow donor levels due to nearby impurities and/or the polaron effect. Charge transfer processes between Nb5+/4+ polaron and Ti4+/3+ shallow donor levels and Jahn - Teller effects of the involved d(1) paramagnetic states have been observed in reduced LiNbO3:Mg:Ti and are compared with literature results in LiNbO3:Ti.
引用
收藏
页码：211 / 219
页数：9
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