Resist evaluation for fabrication of diffractive optical elements (DOEs) with sub-micron resolution in a MEMS production line

被引：4

作者：

Herbjornrod, Aina ^{[1
]}

Schjolberg-Henriksen, Kari ^{[1
]}

Angelskar, Hallvard ^{[2
]}

Lacolle, Matthieu ^{[3
]}

机构：

[1] SINTEF ICT, Dept Microsyst & Nanotechnol, N-0314 Oslo, Norway

[2] Univ Oslo, Ctr Mat Sci & Nanotechnol, N-0318 Oslo, Norway

[3] SINTEF ICT, Opt Measurement Syst & Data Anal, N-0314 Oslo, Norway

来源：

JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 2009年 / 19卷 / 12期

关键词：

D O I：

10.1088/0960-1317/19/12/125022

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Diffractive optical elements (DOEs) represent small, lightweight and potentially low-cost alternatives to conventional optical components. We have evaluated photoresists and processes for fabrication of silicon micro-machined DOEs with a sub-micron pattern using an MA150 (Suss) proximity aligner. The resists HiPR 6512 (Fuji film), AZ ECI 3007 (AZ Electronics Materials), IX335 H (JSR Micro) and UVIII (Rohm and Haas) were all able to resolve the desired 0.8 mu m pattern, but the wall angle obtained with IX335H was a superior 86 degrees. Double development of the resists proved possible in a KOH-based developer but unfeasible in a TMAH-based developer. The final DOE device was successfully realized based on the optimized photolithography process.

引用

页数：9

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