Helium desorption in 3He implanted tungsten at low fluence and low energy

被引：11
|
作者：
Debelle, A. [1 ]
Lhuillier, P. -E. [1 ]
Barthe, M. -F. [1 ]
Sauvage, T. [1 ]
Desgardin, P. [1 ]
机构：
[1] CNRS, CEMHTI, F-45071 Orleans 2, France
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2010年 / 268卷 / 02期
关键词：
Implantation; Helium; Trapping; Vacancy-like defects; POINT-DEFECTS; RETENTION; SURFACE; DIFFUSIVITY; BEHAVIOR; ATOMS;
D O I：
10.1016/j.nimb.2009.10.176
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The behaviour of helium in polycrystalline He-3 implanted tungsten at low energy (60 keV) and low fluence (2 x 10(13) cm(-2)) has been studied as a function of post-implantation annealing temperature until 1873 K by means of Nuclear Reaction Analysis. Helium desorption has been observed only from similar to 1500 K, suggesting a helium trapping at mono-vacancies. Only similar to 75% of the implanted helium has been released after the annealing during 1 h at high temperature (1873 K); besides, the desorption rate decreased from 1673 K. The presence of a second type of helium trapping site is likely to explain this strong helium retention. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：223 / 226
页数：4
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