The hole role in solid-state imagers

被引：8

作者：

Theuwissen, Albert J. P. ^{[1
]}

机构：

[1] DALSA Semi Conductors, NL-5656 AE Eindhoven, Netherlands

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2006年 / 53卷 / 12期

关键词：

charge-coupled device (CCD) image sensors; CMOS image sensors; pinned photodiodes (PPDs);

D O I：

10.1109/TED.2006.885545

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The importance of holes present in the pixels of solid-state image sensors is described by Theuwissen et al. (IEDM Tech. Dig. 2005, p. 817). Today's success of digital imaging is based on the positive effect of an accumulation layer that reduces the interface-related dark current and dark current fixed-pattern noise. This superb imaging feature is applied in charge-coupled devices as well as in complementary metal-oxide-semiconductor devices, in consumer as well as in professional equipment. Holes are not only used to improve the dark performance of imagers; other examples of efficient use of holes are fixing electrostatic potentials, creating gate structures, draining photon-generated charges, and constructing antiblooming means.

引用

页码：2972 / 2980

页数：9

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