Resonant cavity LEDs at 655 and 880 nm wavelengths

被引:3
|
作者
Sipilä, P [1 ]
Saarinen, M [1 ]
Vilokkinen, V [1 ]
Orsila, S [1 ]
Melanen, P [1 ]
Savolainen, P [1 ]
Toivonen, M [1 ]
Dumitrescu, M [1 ]
Pessa, M [1 ]
机构
[1] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland
关键词
light-emitting diodes; RCLED; MBE; quantum well devices; plastic optical fibers;
D O I
10.1117/12.382816
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Monolithic top-emitting resonant cavity light-emitting diodes (RCLEDs) have been fabricated by solid-source MBE. The RCLEDs in the 650-nm range, with modulation bandwidths exceeding 180 MHz, are possible low-cost transmitter candidates for systems using plastic optical fibers (POFs), such as IEEE-1394 at 100 Mb/s and 200 Mb/s and ATM at 155 Mb/s. Modulation bandwidth of >120 MHz and light power of 2 mW (cw) have been achieved for diameter 84-mu m devices driven at a 40 mA current. Accelerated ageing tests for 27,500 device-hours indicate no degradation in output power. A variation in device temperature significantly modifies the far-field pattern and thus the fibre coupling efficiency, due to a cavity detuning effect. The effects of detuning and the temperature and bias dependencies of the devices are investigated. The 880-nm RCLEDs have a maximum output power of 25 mW. Applications include open-air optical communication systems, collision avoidance and measurement systems.
引用
收藏
页码:82 / 89
页数:8
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