Optimization of n-doping in n-type a-SI:H/p-type textured c-Si heterojunction for photovoltaic applications

被引：15
|
作者：
Tucci, M [1 ]
机构：
[1] Univ Rome La Sapienza, Dept Elect Engn, I-00184 Rome, Italy
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1999年 / 57卷 / 03期
关键词：
heterostructure; amorphous silicon; low temperature process;
D O I：
10.1016/S0927-0248(98)00176-7
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In this paper is investigated an heterostructure based on p-doped textured wafers of crystalline silicon on which we deposited a buffer of lightly n-doped amorphous layer and an n(+)-doped layer. In particular, the effect of n-doping of amorphous silicon on the photovoltaic characteristics of the heterojunctions is studied. Starting from an extensive analysis of the doping efficiency of phosphine in microdoped materials we fabricated several devices varying the PH3/SIH4 ratio in the PECVD system. An optimum value of this ratio is found at 10(-2), corresponding to the maximum of the photovoltaic efficiency of 11.5%. (C) 1999 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码：249 / 257
页数：9
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