Optical properties of PECVD and UVCVD SiNx:H antireflection coatings for silicon solar cells

被引：5

作者：

Lelièvre, JF ^{[1
]}

Kaminski, A ^{[1
]}

Boyeauk, JP ^{[1
]}

Monna, R ^{[1
]}

Lemiti, M ^{[1
]}

机构：

[1] Inst Natl Sci Appl, CNRS, UMR 5511, Phys Mat Lab, F-69621 Villeurbanne, France

来源：

Conference Record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005 | 2005年

关键词：

D O I：

10.1109/PVSC.2005.1488330

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A complete study of the optical properties has been achieved for hydrogenated silicon nitride (SiNxH)-H-: obtained by either Low Frequency (40kHz) Plasma Enhanced Chemical Vapour Deposition (LF-PECVD) or by another low temperature deposition technique: UltraViolet photo-assisted CVD (UVCVD). Spectroscopic ellipsometry measurements were carried out on a large number of samples. The results were gathered in a data library in order to compute the wavelength-dependant reflection, absorption and transmission coefficients through the layers. Different optical behaviors were observed according to the deposition technique, with stronger absorption and hence smaller optical gaps for UVCVD films. This is believed to be due to the formation in the SiNx matrix of amorphous silicon (a-Si) clusters, which seem to be much bigger than those obtained in PECVD layers.

引用

页码：1111 / 1114

页数：4

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