Random Telegraph Noise in Highly Scaled nMOSFETs

被引：71

作者：

Campbell, J. P. ^{[1
]}

Qin, J. ^{[1
,2
]}

Cheung, K. P. ^{[1
]}

Yu, L. C. ^{[1
,3
]}

Suehle, J. S. ^{[1
]}

Oates, A. ^{[4
]}

Sheng, K. ^{[3
]}

机构：

[1] NIST, Div Semicond Elect, Gaithersburg, MD 20899 USA

[2] Univ Maryland, Dept Mech Engn, College Pk, MD 20740 USA

[3] Rutgers State Univ, Dept Elect & Comp Engn, Piscataway, NJ 08854 USA

[4] TSMC Ltd, Hsinchu 300, Taiwan

来源：

2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2 | 2009年

关键词：

Random Telegraph Noise; 1/f noise; elastic tunneling; LOW-FREQUENCY NOISE; 1/F NOISE; FLASH MEMORY; OXIDE TRAPS; MODEL; FLUCTUATIONS; DEFECTS; SIGNALS; IMPACT; INSTABILITY;

D O I：

10.1109/IRPS.2009.5173283

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

Recently, 1/f and random telegraph noise (RTN) studies have been used to infer information about bulk dielectric defects' spatial and energetic distributions. These analyses rely on a noise framework which involves charge exchange between the inversion layer and the bulk dielectric defects via elastic tunneling. In this study, we extracted the characteristic capture and emission time constants from RTN in highly scaled nMOSFETs and showed that they are inconsistent with the elastic tunneling picture dictated by the physical thickness of the gate dielectric (1.4 nm). Consequently, our results suggest that an alternative model is required and that a large body of the recent RTN and 1/f noise defect profiling literature very likely needs to be re-interpreted.

引用

页码：382 / +

页数：3

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