Intermittency-induced criticality in the random telegraph noise of nanoscale UTBB FD-SOI MOSFETs

被引：8
|
作者：
Contoyiannis, Y. [1 ]
Potirakis, S. M. [1 ]
Stavrinides, S. G. [2 ]
Hanias, M. P. [3 ]
Tassis, D. [4 ]
Theodorou, C. G. [5 ]
机构：
[1] Univ West Attica, Dept Elect & Elect Engn, Athens, Greece
[2] Int Hellen Univ, Sch Sci & Technol, Thessaloniki, Greece
[3] Int Hellen Univ, Phys Dept, Thessaloniki, Greece
[4] Aristotle Univ Thessaloniki, Phys Dept, Thessaloniki, Greece
[5] LAHC Minatec, IMEP, Grenoble, France
来源：
MICROELECTRONIC ENGINEERING | 2019年 / 216卷
关键词：
Random telegraph noise (RTN); Low frequency noise (LFN); Critical phenomena; Intermittency; Tri-critical dynamics; Method of critical fluctuations (MCF); Deterministic chaotic nature; UTBB FD-SOI MOSFET; LOW-FREQUENCY NOISE;
D O I：
10.1016/j.mee.2019.111027
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The drain current in nanoscale fully depleted ultra-thin body and buried oxide n-MOSFETs is studied in terms of critical dynamics. The time series formed by the measured current through the channel of the MOSFET, appears to have the form of random telegraph noise (RTN). This timeseries is analyzed by the Method of Critical Fluctuation (MCF). Its dynamics are compatible with critical intermittency. According to the quantitative analysis performed, the current-value distributions are compatible with the spontaneous symmetry breaking phenomenon; in addition, it also carries information of criticality according to the corresponding power law. Finally, MCF analysis identified traces of tri-critical dynamics.
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收藏
页数：7
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